PART |
Description |
Maker |
V53C104P-70 V53C104P-70L V53C104P-12 V53C104P-12L |
HIGH PERFORMANCE, LOW POWER 256K X 4 BIT FAST PAGE MODE CMOS DYNAMIC RAM TRANS NPN DARL 100V 8A TO022FP
|
Mosel Vitelic, Corp.
|
BD237 ON0191 |
From old datasheet system POWER TRANSISTORS NPN SILICON Plastic Medium Power Silicon NPN Transistor CASE 77-09 TO-225AA TYPE
|
Motorola Inc ONSEMI[ON Semiconductor] MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
|
BD675 BD679A BD677A BD677 ON0196 BD675A BD679 BD67 |
From old datasheet system 4.0 AMPERE POWER TRANSISTORS Plastic Medium-Power Silicon NPN Darlingtons DARLINGTON POWER TRANSISTORS NPN SILICON
|
MOTOROLA[Motorola, Inc] ON Semiconductor Motorola Inc Motorola, Inc.
|
MJE13002 MJE13003 |
1.400W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 1.500A Ic, 8 - 40 hFE. NPN EPITAXIAL SILICON POWER TRANSISTORS
|
Continental Device India Limited
|
MJD13003 |
NPN SILICON PLASTIC POWER TRANSISTOR
|
Continental Device India Limited CDIL
|
BD675-D |
Plastic Medium-Power Silicon NPN Darlingtons
|
ON Semiconductor
|
CSD1638 |
NPN SILICON PLASTIC POWER DARLINGTON TRANSISTOR
|
CDIL[Continental Device India Limited]
|
CDD1933 |
NPN SILICON PLASTIC POWER DARLINGTON TRANSISTOR
|
Continental Device India Limited
|
CFD1933 CFD1933-9AW |
NPN SILICON PLASTIC POWER DARLINGTON TRANSISTOR
|
Continental Device Indi...
|
2N4921G 2N4923G 2N4921 2N4921_06 2N4922 2N4922G 2N |
Medium−Power Plastic NPN Silicon Transistors
|
ONSEMI[ON Semiconductor]
|
MJE521 MJE521G |
Plastic Medium−Power NPN Silicon Transistor
|
ON Semiconductor
|
2SD313 |
NPN silicon plastic power transistor. Designed for low frequency power amplifier. Vceo =60V, DC current gain: 40 @ Ic = 2A. Pd = 30W.
|
USHA India LTD
|